| PART |
Description |
Maker |
| UMH9N |
NPN Multi-Chip Built-in Resistors Transistor
|
SeCoS Halbleitertechnologie GmbH
|
| MPSA12DA MPSA12DB MPSA12DC MPSA42DB MPSA42DC MPSA4 |
TRANSISTOR | BJT | PNP | 150V V(BR)CEO | CHIP 晶体管|晶体管|进步党| 150伏五（巴西）总裁|芯片
TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | CHIP 晶体管|晶体管|达林顿|叩| 60V的五（巴西）总裁|芯片
TRANSISTOR | BJT | NPN | 140V V(BR)CEO | CHIP 晶体管|晶体管| npn型| 140伏特五（巴西）总裁|芯片
TRANSISTOR | BJT | PNP | 300V V(BR)CEO | CHIP
TRANSISTOR | BJT | DARLINGTON | NPN | 30V V(BR)CEO | CHIP
TRANSISTOR | BJT | NPN | 300V V(BR)CEO | CHIP
TRANSISTOR|BJT|DARLINGTON|NPN|CHIP
TRANSISTOR|BJT|DARLINGTON|NPN|30VV(BR)CEO|CHIP
|
Zetex Semiconductor PLC
Central Semiconductor, Corp.
Cypress Semiconductor, Corp.
|
| TPC6901A |
Multi-Chip Transistor Silicon NPN / PNP Epitaxial Type
|
Toshiba Semiconductor
|
| TH50VSF3582AASB |
MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE
|
TOSHIBA
|
| CMLM0405 |
MULTI DISCRETE MODULESURFACE MOUNT LOW VCE (SAT) SILICON NPN TRANSISTOR AND LOW VF SILICON SCHOTTKY DIODE 200 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR
|
Central Semiconductor, Corp.
|
| KC847S |
NPN Multi-Chip General Purpose Amplifier
|
Guangdong Kexin Industrial Co.,Ltd
|
| MMDT4401 |
Multi-Chip Transistor
|
SeCoS Halbleitertechnologie GmbH
|
| BUW51 |
NPN MULTI-EPITAXIAL POWER TRANSISTOR 20 A, 200 V, NPN, Si, POWER TRANSISTOR
|
Nichicon, Corp.
SEME-LAB[Seme LAB]
SemeLAB
|
| SMUN5214DW SMUN5230DW SMUN5231DW SMUN5211DW SMUN52 |
NPN Multi-Chip Built-in Resistors Transistor
Built-in Resistors Transistor
|
SeCoS Halbleitertechnol...
SeCoS Halbleitertechnologie GmbH
|
| BUP54 |
NPN MULTI-EPITAXIAL TRANSISTOR
|
SemeLAB
SEME-LAB[Seme LAB]
|
| TPCP8F01 |
TOSHIBA Multi-chip Device Silicon PNP Epitaxial Transistor , Field Effect Transistor Silicon N Channel MOS Type
|
Toshiba Semiconductor
|
| BUP53 |
SILICON MULTI-EPITAXIAL NPN TRANSISTOR
|
Seme LAB
|
